Next generation devices get boost from Penn State research
Friday, January 22, 2010Researchers in the Electro-Optics Center (EOC) Materials Division at Penn State have produced 100 mm diameter graphene wafers, a key milestone in the development of graphene for next generation high-power, high-frequency electronic devices including displays, solar cells, sensors and more. Thanks to the ability of an electron to move at 1/300th the speed of light through graphene (significantly faster than silicon), graphene is a candidate material for many high-speed computing applications in the multibillion-dollar semiconductor device industry, and has the potential to enable terahertz computing, at processor speeds 100 to 1,000 times faster than silicon. (more)















